篇題：Enhancement-Mode InAlN/GaN Power MOSHEMT on Silicon With Schottky Tri-Drain Extension
文章出處：IEEE ELECTRON DEVICE LETTERS, VOL. 41, NO. 7, JULY 20200741-3106 © 2020 IEEE.
作者：Yi-Ping Huang , Ching-Sung Lee , and Wei-Chou Hsu, Member, IEEE
任職單位及部門：國立成功大學 微電子工程學系
This study demonstrates an enhancementmode (E-mode) InAlN/GaN MOSHEMT on a silicon substrate with a Schottky tri-drain extension (STDE) to yield a large breakdown voltage (VBD) while maintaining a low
on-resistance (Ron). The E-mode operation is realized by a recessed tri-gate nanowire structure. The STDE functions as a drain-connected field plate (FP) to effectively distribute the electric field (E-field) around the drain contact edge, improving the VBD. Moreover, through the metal of the
STDE directly contacting the 2-D electron gas (2-DEG) from the sidewalls, a low specific Ron (Ron, sp) is achieved. The proposed device with a gate-to-drain length (LGD) of 5 μm exhibits a threshold voltage (VTH) of +0.9 V, large maximum drain current (ID, max) of 815 ± 27 mA/mm, high Ion/Ioff ratio of 1010, steep subthreshold swing (SS) of 67 mV/decade,
Superior VBD of 830 V, and low Ron, sp of 0.74± 0.04mΩ·cm2. With LGD of 10 μm, a VBD of 1190 V is achieved, corresponding to a Ron, sp of 1.39 ± 0.07 mΩ·cm2. These results reveal great potential for future E-mode power device applications.
文章摘要：
在矽基板上具有三維結構肖特基汲極延伸之增強型 (E-mode) InAlN/GaN 高功率 MOSHEMT，實現了大的崩潰電壓 (VBD)，且同時保持低導通電阻 (Ron)。 藉由嵌入式的三維奈米線閘極結構達成增強型元件，三維結構肖特基汲極延伸(STDE) 是在汲極端延伸之場板結構 (FP)，此結構有效分散聚集在汲極端邊緣的電場 (E-field)，從而改善崩潰電壓(VBD)。此外，透過三維結構肖特基汲極延伸結構(STDE)，金屬可以直接由側壁接觸二維電子氣 (2-DEG)，而實現了低的導通電俎 Ron (Ron, sp)。我們設計了柵極至汲極長度(LGD)為 5 μm ，此元件具有 +0.9 V 的臨界電壓 (VTH)、815 ± 27 mA/mm 大的最大電流密度 (ID, max)、高的電流開關比 ( Ion/Ioff )為1010，優秀的次臨界擺幅 (SS) 為 67 mV/ decade,，優良的崩潰電壓(VBD )為830 V，以及低的特性導通電阻(Ron，sp )為0.74±0.04 mΩ·cm2。而柵極至汲極長度(LGD)為 10 μm的原件，其崩潰電壓(VBD )為1190 V，且同時擁有低的特性導通電阻(Ron，sp )為 1.39 ± 0.07 mΩ·cm2。以上結果表明了，此元件在未來增強型(E-mode)功率元件應用上，具有巨大的潛力。