篇題：The First Embedded 14nm FeFinFET NVM: 2T1CFE Array as Electrical Synapses and Activations for High-Performance and Low-Power Inference Accelerators
文章出處：https://ieeexplore.ieee.org/document/9508737
作者：E. R. Hsieh, W. L. Tsai, Y. L. Lin, C. H. Liu, S. S. Chung, Y. T. Tang, J. R. Su, T. P. Chen, S. A. Huang, T. J. Chen and O. Cheng
任職單位及部門：中央大學電機系, 台師大機電工程系, 陽明交大電子研究所, 聯電
We present the 1 st embedded 14nm FeFinFET NVMs, 2T1C FE . Compared to 1T1C FE array, 2T1C FE one shows 25x ↑ of the SN ratio, 10 4 x ↓ of the PGM power, and 10 3 x ↓ of READ power. The gradual tuning of conductance for 2T1C FE has been tuned linearly and symmetrically with 3x10 4 x of the window, where 8 separated conductance states can be stored with crystal gaps in between. Continual endurance cycles for 8 states are >10 7 times. The retention of 8 states has been baked in 85°C for more than 1 month. The 8 states have also passed the PGM disturbance test. Finally, this 2T1C FE array is used as electrical synapses in a very deep neural network (DNN) with 23.8 million parameters for practice, and most importantly, the 2T1C FE is also used as an activation, Rectified Linear Unit (ReLU), for the first time. Compared to the 5T-CMOS ReLU, the 2T1C FE ReLU shows 70%↑of inference accuracy. Overall, 2T1C FE shows strong potential as key components in high-performance low-power inference-accelerators.
(本文為2021年台灣唯一入圍頂尖國際會議VLSI論文展示Demo session競賽)
文章摘要：
本文展示了全球第一個嵌入式14奈米FinFET鐵電記憶體2T1CFE。與1T1CFE陣列相比，2T1CFE擁有25倍以上的訊噪比、編程功耗降低10的四次方倍且讀取功耗降低10的三次方倍。2T1CFE漸進調整的電導，可在3x10的四次方倍的視窗間做線性、對稱地調整，其8個分離的電導狀態之間存在著明顯間隔。8個狀態的連續耐久性測試超過10的7次方週期。在溫度85°C下烘烤超過1個月，8個狀態仍展現優異的資料保存特性。8個狀態也通過了編程擾動的測試。最後，吾等將此2T1CFE陣列做為電突觸應用於 2380 萬個參數的深度神經網絡(DNN)中。且更重要的是，2T1CFE首次應用於ReLU激活函數。與5T-CMOS ReLU相比，2T1CFE ReLU在推論的準確率上展現了70%的提升。總體而言，2T1CFE相當有潛力可作為高性能、低功耗推論加速器的關鍵組件。