篇題：Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage
文章出處：Solid State Electronics Letters, 2, pp23-27, 2020.
作者：Yu-Chin Lee, Jyh-Ling Lin
任職單位及部門：光寶科技股份有限公司、華梵大學智慧生活科技學系
Power loss has long been a problem that humans continue to explore, especially in this high-performance era, in which the question of how to reduce the power loss of electronic products is an important issue. In this paper, Split-Gate MOSFETs were studied for parameter optimization and cell pitch miniaturization. The size of cell pitch is reduced to 1.45 um and specific on-resistance aggregately reduced by about 69%, when the breakdown voltage is kept higher than 60 V. The power loss is reduced by almost 70% comparison to commercial Split-Gate Trench MOSFETs.
文章摘要：
現代科技是個講求高效能的世代，能源過多的消耗一直是人類持續在探討的問題，因此如何降低電子產品的功耗是一個重要研究議題。本文中針對Split-Gate MOSFET進行元件參數優化和元件尺寸的微縮化。結果得到當崩潰電壓保持在 60 V 以上時，元件的尺寸可以減小到 1.45 um，與商用 Split-Gate Trench MOSFET 相比，特徵導通電阻總共降低了約 69%。功率損耗降低了近 70%。